This paper presents recent progress to scale down low-temperature polysilicon (LTPS) TFT technologies in the extremely short-channel length regime for AMOLED displays. Process integration of short-channel gate and narrow-width polysilicon into scaled equivalent gate-oxide thickness (EOT), is explored, in conjunction with enhanced poly crystallization by reducing defect density-of-state (DOS) especially in the grain boundaries of the channel region. We obtain more than twice higher current drive (Ion) with significantly-reduced parasitic gate capacitance, thereby enabling high-performance high-frequency panel operations. In addition to superior panel performance in scaled LTPS TFTs, reliable devices are attained, demonstrating robust device characteristics for negative-bias instability (NBTI) and hot carrier injection (HCI) effects. Physics-based analysis, based on experimental data and numerical device simulations, is performed to gain more insight in the TFT technologies.
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