Associate Professor Shanghai Jiao Tong University 800 Dongchuan Rd, China (People's Republic)
In this work, we report a BEOL-compatible ferroelectric field-effect transistor using oxide semiconductor as channel and ferroelectric hafnium zirconium oxide as gate insulator all grown by atomic layer deposition with a low thermal budget of 400oC, and meanwhile demonstrating well-behaved ferroelectric characteristics.
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