Student researcher Electronics and Telecommunications Research Institute Daejeon, Republic of Korea
We demonstrate the oxide semiconductor TFTs with submicron channel length realized by Self-Aligned Nanogap Patterning (SANP) process which makes it enable to overcome the resolution limit of conventional photolithographic tool in the large area electronics. Using contact aligner with line and space resolution of 3 ?m, the Al-doped InZnSnO TFT with field-effect mobility of 12 cm^2/Vs, subthreshold swing of 100 mV/dec, Ion/Ioff of 10^10, and turn-on voltage of -0.88 V was successfully fabricated in the channel length of about 100 nm.