junior engineerer BOE Technology Group Co., Ltd. Beijing, China (People's Republic)
One of the major challenges for new display technologies based on quantum dot light-emitting (QLED) was replacing toxic emission layers. Indium phosphide (InP) quantum dots were considered as the most promising alternative materials. In this work, the optimal vertical light extraction could be obtained by simulating the different thickness of electron transport layer (ETL) in devices. The Mg-doped ZnO (ZnMgO) electron transport layer was adopted to further balance the carriers and optimize the light extraction. Finally, devices with higher current efficiency and narrower full width at half maximum (FWHM) of electroluminescent peaks (EL) were obtained.
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